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NCE0275 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0275uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in automotive applications and a wide variety of other applications.

Features

  • VDSS =200V,ID =75A RDS(ON) < 20mΩ @ VGS=10V.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet preview – NCE0275

Datasheet Details

Part number NCE0275
Manufacturer NCE Power Semiconductor
File Size 318.22 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0275 Datasheet
Additional preview pages of the NCE0275 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0275 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0275uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
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