NCE08N50I
NCE08N50I is N-Channel Super Junction Power MOSFET manufactured by NCE Power Semiconductor.
Description
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
- New technology for high voltage device
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS pliant
TVDS@ jmax
RDS(ON) ID
560 600 7.8
V mΩ A
Application
- Power factor correction（PFC）
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
TO-251
NCE08N50K
TO-252
NCE08N50K
Table 1. Absolute Maximum Ratings (TC=25℃) Parameter
Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 400 V, ID = 7.8 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note 2) Avalanche current(Note 1)
Symbol VDS VGS ID (DC) ID (DC)
IDM (pluse) dv/dt
EAS IAR
TO-251
Value...
