NCE1012E Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features - VDS = 20V,ID =0.6A RDS(ON) <350mΩ @ VGS=4.5V RDS(ON) <500mΩ @ VGS=2.5V - High power and current handing capability - Lead free product is acquired - Gate-Source ESD protection Application - Battery operated systems - Load/ power switching cell phones pagers - Power supply converter circuits Schematic diagram Marking and pin...