NCE1012E - N-Channel Enhancement Mode Power MOSFET

Description

The NCE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 20V,ID =0.6A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE1012E
Manufacturer	NCE Power Semiconductor
File Size	447.93 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE1012E Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE1012E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID =0.6A RDS(ON) <350mΩ @ VGS=4.5V RDS(ON) <500mΩ @ VGS=2.

Published: Feb 5, 2016 |