NCE12P09S - P-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

Datasheet Details

Part number	NCE12P09S
Manufacturer	NCE Power Semiconductor
File Size	365.48 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE12P09S Datasheet
Additional preview pages of the NCE12P09S datasheet.

Product details

Description

The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Features

VDS = -12V,ID = -9A Schematic diagram RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V.
Advanced trench MOSFET process technology Only.
Ultra low on-resistance with low gate charge.

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Published: Jun 2, 2018 |