NCE12P09S Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

NCE12P09S p-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE12P09S
Manufacturer	NCE Power Semiconductor
File Size	365.48 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE12P09S Datasheet

General Description

The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

General

Overview

http://www.ncepower.com NCE12P09S NCE P-Channel Enhancement Mode Power.

Key Features

VDS = -12V,ID = -9A Schematic diagram RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V.
Advanced trench MOSFET process technology Only.
Ultra low on-resistance with low gate charge.

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