NCE12P09S
Description
The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.
Key Features
- VDS = -12V,ID = -9A RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V
- Advanced trench MOSFET process technology Only
- Ultra low on-resistance with low gate charge
