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NCE12P09S - P-Channel Enhancement Mode Power MOSFET

Description

The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Features

  • VDS = -12V,ID = -9A Schematic diagram RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V.
  • Advanced trench MOSFET process technology Only.
  • Ultra low on-resistance with low gate charge.

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Datasheet Details

Part number NCE12P09S
Manufacturer NCE Power Semiconductor
File Size 365.48 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE12P09S Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com NCE12P09S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -9A Schematic diagram RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.
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