NCE12P09S Key Features
- VDS = -12V,ID = -9A
- Advanced trench MOSFET process technology
- Ultra low on-resistance with low gate charge
| Part Number | Description |
|---|---|
| NCE1205 | N & P-Channel Enhancement Mode Power MOSFET |
| NCE1012E | N-Channel Enhancement Mode Power MOSFET |
| NCE10G120 | Trench NPT IGBT |
| NCE11N60 | N-Channel Super Junction Power MOSFET |
| NCE11N60D | N-Channel Super Junction Power MOSFET |