NCE1550F
Description
The NCE1550F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS =150V,ID =50A RDS(ON) <23mΩ @ VGS=10V - High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
