Datasheet4U Logo Datasheet4U.com

NCE15GD120P - Trench NPT IGBT

Description

Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness.

This device is designed for soft switching applications.

Features

  • z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=15A z High input impedance.

📥 Download Datasheet

Datasheet Details

Part number NCE15GD120P
Manufacturer NCE Power Semiconductor
File Size 232.94 KB
Description Trench NPT IGBT
Datasheet download datasheet NCE15GD120P Datasheet

📁 Similar Datasheet

  • NCE1520 - N-Channel 150-V MOSFET (VBsemi)
  • NCE1540KA - N-Channel 150V MOSFET (VBsemi)
  • NCE1570 - N-Channel 150V MOSFET (VBsemi)
  • NCE0103 - N-Channel 100V MOSFET (VBsemi)
  • NCE0157A2 - N-Channel Power MOSFET (VBsemi)
  • NCE01H16 - N-Channel MOSFET (VBsemi)
  • NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
  • NCE2025I - N-Channel MOSFET (VBsemi)
  • NCE2025S - N-Channel MOSFET (VBsemi)
  • NCE20H11 - N-Channel 20V MOSFET (VBsemi)
Other Datasheets by NCE Power Semiconductor

Full PDF Text Transcription

Click to expand full text
http://www.ncepower.com NCE15GD120P 1200V, 15A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=15A z High input impedance Applications z Inductive heating, Microwave oven, Inverter, UPS, etc. z Soft switching applications General Description Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications.
Published: |