NCE20NP1006S Datasheet | NCE Power Semiconductor

http://.ncepower. N and P-Channel Enhancement Mode Power MOSFET Description The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features - N-Channel N-channel P-channel VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V - P-Channel VDS = -20V,ID = -6A Only Schematic diagram RDS(ON) < 45mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-2.5V - High power and current handing capability Use - Lead free product is acquired - Surface mount package - Pb free terminal plating - RoHS...