NCE20P45Q
Description
The NCE20P45Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS =-19V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
