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NCE2301F Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

Datasheet Details

Part number NCE2301F
Manufacturer NCE Power Semiconductor
File Size 210.18 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet NCE2301F-NCEPowerSemiconductor.pdf

NCE2301F Overview

The NCE2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

NCE2301F Key Features

  • VDS = -20V,ID = -2 A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

More Datasheets from NCE Power Semiconductor

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NCE2301F Distributor