• Part: NCE2301F
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 210.18 KB
NCE2301F Datasheet (PDF) Download
NCE Power Semiconductor
NCE2301F

Description

The NCE2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

Key Features

  • VDS = -20V,ID = -2 A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S - High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Marking and pin assignment