Datasheet4U Logo Datasheet4U.com

NCE2302 - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D G S Schematic diagram 3D 2302 G1 2S Marking and pin assignment.

📥 Download Datasheet

Datasheet Details

Part number NCE2302
Manufacturer NCE Power Semiconductor
File Size 282.60 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2302 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NCE2302D N-Channel 20V MOSFET VBsemi
NCE2025I N-Channel MOSFET VBsemi
NCE2025S N-Channel MOSFET VBsemi
NCE20H11 N-Channel 20V MOSFET VBsemi
NCE0103 N-Channel 100V MOSFET VBsemi

Other Datasheets by NCE Power Semiconductor

Part Number Description
NCE2302B N-Channel Enhancement Mode Power MOSFET
NCE2302C N-Channel Enhancement Mode Power MOSFET
NCE2301 NCE P-Channel Enhancement Mode Power MOSFET
NCE2301A P-Channel Enhancement Mode Power MOSFET
NCE2301B P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
http://www.ncepower.com Pb Free Product NCE2302 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.