Datasheet Details
| Part number | NCE2302B |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 243.88 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE2302B Datasheet
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General Description
The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 20V,ID = 3.3A RDS(ON) < 60mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
- High power and current handing capability.
- Lead free product is acquired.
- Surface mount package Schematic diagram Marking and pin assignment.