• Part: NCE2305
  • Description: NCE P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 301.75 KB
Download NCE2305 Datasheet PDF
NCE Power Semiconductor
NCE2305
NCE2305 is NCE P-Channel Enhancement Mode Power MOSFET manufactured by NCE Power Semiconductor.
Description The NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features - VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V S Schematic diagram - High power and current handing capability - Lead free product is acquired - Surface mount package Marking and pin assignment Application - PWM applications - Load switch - Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC =25℃ Continuous Drain Current TC =70℃ TA =25℃ TA =70℃ Drain Current -Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note...