NCE2305
NCE2305 is NCE P-Channel Enhancement Mode Power MOSFET manufactured by NCE Power Semiconductor.
Description
The NCE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
- VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V
S Schematic diagram
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Marking and pin assignment
Application
- PWM applications
- Load switch
- Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC =25℃
Continuous Drain Current
TC =70℃ TA =25℃
TA =70℃
Drain Current -Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note...