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NCE2312 - NCE N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE2312 NCE N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE2312

Datasheet Details

Part number	NCE2312
Manufacturer	NCE Power Semiconductor
File Size	291.37 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2312 Datasheet
Additional preview pages of the NCE2312 datasheet.

Product details

Description

The NCE2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram Marking and pin assignment.

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Other Datasheets by NCE Power Semiconductor

NCE2312A - NCE N-Channel Enhancement Mode Power MOSFET
NCE2301 - NCE P-Channel Enhancement Mode Power MOSFET
NCE2301A - P-Channel Enhancement Mode Power MOSFET
NCE2301B - P-Channel Enhancement Mode Power MOSFET
NCE2301C - P-Channel Enhancement Mode Power MOSFET
NCE2301D - P-Channel Enhancement Mode Power MOSFET

Published: May 22, 2015 |