NCE3050I Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3050I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL Features - VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V Schematic diagram - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard Switched and High Frequency...