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NCE3060G - N-Channel Enhancement Mode Power MOSFET

Description

The NCE3060G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =60A RDS(ON).

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Datasheet preview – NCE3060G

Datasheet Details

Part number NCE3060G
Manufacturer NCE Power Semiconductor
File Size 342.99 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3060G Datasheet
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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE3060G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3060G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =60A RDS(ON) <4.0 mΩ @ VGS=10V RDS(ON) <5.5 mΩ @ VGS=4.
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