NCE30D0808J - N-Channel Enhancement Mode Power MOSFET

Description

The NCE30D0808J uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications.

Features

VDS = 30V,ID = 7.7A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE30D0808J
Manufacturer	NCE Power Semiconductor
File Size	280.71 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30D0808J Datasheet
Additional preview pages of the NCE30D0808J datasheet.

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http://www.ncepower.com Pb Free Product NCE30D0808J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30D0808J uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features ● VDS = 30V,ID = 7.7A RDS(ON) <25mΩ @ VGS=10V RDS(ON) <35mΩ @ VGS=4.

Published: Jun 2, 2018 |