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NCE30D2519K - N & P-Channel Enhancement Mode Power MOSFET

General Description

The NCE30D2519K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • N channel.
  • VDS =30V,ID =25A RDS(ON).

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Datasheet Details

Part number NCE30D2519K
Manufacturer NCE Power Semiconductor
File Size 450.62 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE30D2519K Datasheet

Full PDF Text Transcription for NCE30D2519K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE30D2519K. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE30D2519K NCE N&P-Channel complementary Power MOSFET Description The NCE30D2519K uses advanced trench technology and design to p...

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iption The NCE30D2519K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =30V,ID =25A RDS(ON) <12mΩ @ VGS=10V RDS(ON) <18mΩ @ VGS=4.5V p channel ● VDS =-30V,ID =-19A RDS(ON) <35mΩ @ VGS=-10V RDS(ON) <65mΩ @ VGS=-4.

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