NCE30H32WD
Description
The NCE30H32WD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS =30V ,ID =320A RDS(ON) < 1.6mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
