• Part: NCE30H32WD
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 344.84 KB
Download NCE30H32WD Datasheet PDF
NCE30H32WD page 2
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NCE30H32WD page 3
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NCE30H32WD Key Features

  • VDS =30V ,ID =320A RDS(ON) < 1.6mΩ @ VGS=10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply
  • Tape width