NCE30ND09S Key Features
- VDS =30V,ID =9A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
| Part Number | Description |
|---|---|
| NCE30NP07S | N and P-Channel Enhancement Mode Power MOSFET |
| NCE30NP4030G | N&P-Channel complementary Power MOSFET |
| NCE3007S | P-Channel Enhancement Mode Power MOSFET |
| NCE3008M | N-Channel Enhancement Mode Power MOSFET |
| NCE3011E | N-Channel Enhancement Mode Power MOSFET |