• Part: NCE30P30G
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 360.70 KB
NCE30P30G Datasheet (PDF) Download
NCE Power Semiconductor
NCE30P30G

Description

The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -30A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package DDDD DDDD