Datasheet4U Logo Datasheet4U.com

NCE30TD60BP Datasheet Trench FS II Fast IGBT

Manufacturer: NCE Power Semiconductor

📥 Download Datasheet

Datasheet Details

Part number NCE30TD60BP
Manufacturer NCE Power Semiconductor
File Size 571.81 KB
Description Trench FS II Fast IGBT
Download NCE30TD60BP Download (PDF)

General Description

: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation;

Overview

600V, 30A, Trench FS II Fast IGBT General.

Key Features

  • Trench FSII Technology offering.
  • Very low VCE(sat).
  • High speed switching.
  • Positive temperature coefficient in VCE(sat).
  • Very tight parameter distribution.
  • High ruggedness, temperature stable behavior.

More Datasheets from NCE Power Semiconductor

Part Number Description
NCE30TD60B Trench FS II Fast IGBT
NCE30TD60BF Trench FS II Fast IGBT
NCE3007S P-Channel Enhancement Mode Power MOSFET
NCE3008M N-Channel Enhancement Mode Power MOSFET
NCE3011E N-Channel Enhancement Mode Power MOSFET
NCE3012S P-Channel Enhancement Mode Power MOSFET
NCE3018AS N-Channel Enhancement Mode Power MOSFET
NCE3020Q N-Channel Enhancement Mode Power MOSFET
NCE3025G N-Channel Enhancement Mode Power MOSFET
NCE3025Q N-Channel Enhancement Mode Power MOSFET