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NCE3420 - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a uni-directional or bi-directional load switch.

Features

  • VDS = 20V,ID = 6A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number NCE3420
Manufacturer NCE Power Semiconductor
File Size 210.55 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3420 Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE3420 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. General Features ● VDS = 20V,ID = 6A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.
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