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NCE40H19 - NCE N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE40H19 NCE N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE40H19

Datasheet Details

Part number	NCE40H19
Manufacturer	NCE Power Semiconductor
File Size	448.86 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE40H19 Datasheet
Additional preview pages of the NCE40H19 datasheet.

Product details

Description

The NCE40H19 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =40V,ID =190A RDS(ON) < 3.5mΩ @ VGS=10V Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: May 22, 2015 |