NCE40H19
Description
The NCE40H19 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS =40V,ID =190A RDS(ON) < 3.5mΩ @ VGS=10V - High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
