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NCE40H21C - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE40H21C N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE40H21C

Datasheet Details

Part number	NCE40H21C
Manufacturer	NCE Power Semiconductor
File Size	440.46 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE40H21C Datasheet
Additional preview pages of the NCE40H21C datasheet.

Product details

Description

The NCE40H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =40V ,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 2, 2018 |