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NCE4525 - N & P-Channel Enhancement Mode Power MOSFET

General Description

The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Key Features

  • N-Channel VDS = 40V,ID =7A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 38mΩ @ VGS=4.5V N-channel P-channel Schematic diagram.
  • P-Channel VDS = -40V,ID = -5A RDS(ON) < 38mΩ @ VGS=-10V RDS(ON).

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Datasheet Details

Part number NCE4525
Manufacturer NCE Power Semiconductor
File Size 519.17 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4525 Datasheet

Full PDF Text Transcription for NCE4525 (Reference)

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http://www.ncepower.com Pb Free Product NCE4525 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4525 uses advanced trench technology to provide excellent...

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ption The NCE4525 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 40V,ID =7A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 38mΩ @ VGS=4.5V N-channel P-channel Schematic diagram ● P-Channel VDS = -40V,ID = -5A RDS(ON) < 38mΩ @ VGS=-10V RDS(ON) <50mΩ @ VGS=-4.