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NCE4801 - P-Channel Enhancement Mode Power MOSFET

Description

The NCE4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -5A RDS(ON) < 80mΩ @ VGS=-2.5V RDS(ON) < 57mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram Marking and Pin Assignment.

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Datasheet preview – NCE4801

Datasheet Details

Part number NCE4801
Manufacturer NCE Power Semiconductor
File Size 321.55 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4801 Datasheet
Additional preview pages of the NCE4801 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE4801 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -5A RDS(ON) < 80mΩ @ VGS=-2.5V RDS(ON) < 57mΩ @ VGS=-4.
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