Datasheet4U Logo Datasheet4U.com

NCE4963 - P-Channel Enhancement Mode Power MOSFET

Description

The NCE4963 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Only UseMarking and pin assignment.

📥 Download Datasheet

Datasheet preview – NCE4963

Datasheet Details

Part number NCE4963
Manufacturer NCE Power Semiconductor
File Size 802.06 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4963 Datasheet
Additional preview pages of the NCE4963 datasheet.

📁 Similar Datasheet

  • NCE4060K - N-Channel 40V MOSFET (VBsemi)
  • NCE40H12K - N-Channel MOSFET (VBsemi)
  • NCE4503 - SOP8 Plastic-Encapsulate MOSFETS (TY Semiconductor)
  • NCE4614 - Dual-Channel MOSFET (VBsemi)
  • NCE0103 - N-Channel 100V MOSFET (VBsemi)
  • NCE0157A2 - N-Channel Power MOSFET (VBsemi)
  • NCE01H16 - N-Channel MOSFET (VBsemi)
  • NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
  • NCE1520 - N-Channel 150-V MOSFET (VBsemi)
  • NCE1540KA - N-Channel 150V MOSFET (VBsemi)
Other Datasheets by NCE Power Semiconductor
  • NCE4953 - P-Channel Enhancement Mode Power MOSFET
  • NCE4953A - P-Channel Enhancement Mode Power MOSFET
  • NCE4007S - P-Channel Enhancement Mode Power MOSFET
  • NCE4009S - N-Channel Enhancement Mode Power MOSFET
  • NCE4012S - N-Channel Enhancement Mode Power MOSFET
  • NCE4015S - N-Channel Enhancement Mode Power MOSFET
  • NCE4028EK - N-Channel Enhancement Mode Power MOSFET
  • NCE4036F - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
http://www.ncepower.com NCE4963 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4963 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 D2 G1 G2 S1 S2 Schematic diagram General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.
Published: |