NCE5015S - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

Part number	NCE5015S
Manufacturer	NCE Power Semiconductor
File Size	401.68 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE5015S Datasheet
Additional preview pages of the NCE5015S datasheet.

The NCE5015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS = 60V,ID =12A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Jun 2, 2018 |