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NCE5015S - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE5015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 60V,ID =12A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses Schematic diagram.

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Datasheet Details

Part number NCE5015S
Manufacturer NCE Power Semiconductor
File Size 401.68 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE5015S Datasheet

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Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE5015S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.