NCE5080K Key Features
- VDS =50V,ID =80A RDS(ON) <7.5mΩ @ VGS=10V RDS(ON) <9mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Load switching
- Hard switched and high frequency circuits
- Uninterruptible power supply