NCE5520Q - NCE N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =55V,ID =20A RDS(ON) < 22mΩ @ VGS=10V (Typ:19mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.

📥 Download Datasheet

NCE5520Q nce n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE5520Q
Manufacturer	NCE Power Semiconductor
File Size	281.41 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE5520Q Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NCE5530K	P-Channel Enhancement Mode Power MOSFET	NCE Power
NCE5549	NCE N-Channel Enhancement Mode Power MOSFET	NCE Power
NCE55H11	NCE N-Channel Enhancement Mode Power MOSFET	NCE Power
NCE55P05S	P-Channel 60V MOSFET	VBsemi
NCE55P30	P-Channel Enhancement Mode Power MOSFET	NCE Power

Other Datasheets by NCE Power Semiconductor

Part Number	Description
NCE5558K	NCE N-Channel Enhancement Mode Power MOSFET
NCE55H12	N-Channel Enhancement Mode Power MOSFET
NCE55P04S	P-Channel Enhancement Mode Power MOSFET
NCE55P05S	P-Channel Enhancement Mode Power MOSFET
NCE55P15	P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.