NCE5520Q
Description
The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Part: NCE5520Q
- Description: NCE N-Channel Enhancement Mode Power MOSFET
- Category: MOSFET
- Manufacturer: NCE Power Semiconductor
- Size: 281.41 KB