NCE5520Q Key Features
- VDS =55V,ID =20A RDS(ON) < 22mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Industrial power supplies
- LED backlighting
- Tape width
- Quantity
- Part: NCE5520Q
- Description: NCE N-Channel Enhancement Mode Power MOSFET
- Manufacturer: NCE Power Semiconductor
- Size: 281.41 KB
Related NCE Power Semiconductor Datasheets
| Part Number | Description |
|---|---|
| NCE5558K | NCE N-Channel Enhancement Mode Power MOSFET |
| NCE55H12 | N-Channel Enhancement Mode Power MOSFET |
| NCE55P04S | P-Channel Enhancement Mode Power MOSFET |
| NCE55P05S | P-Channel Enhancement Mode Power MOSFET |
| NCE55P15 | P-Channel Enhancement Mode Power MOSFET |