NCE55P30K - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE55P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =-55V,ID =-30A RDS(ON).

📥 Download Datasheet

NCE55P30K p-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE55P30K
Manufacturer	NCE Power Semiconductor
File Size	351.46 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE55P30K Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NCE55P30	P-Channel Enhancement Mode Power MOSFET	NCE Power

Other Datasheets by NCE Power Semiconductor

Part Number	Description
NCE55P04S	P-Channel Enhancement Mode Power MOSFET
NCE55P05S	P-Channel Enhancement Mode Power MOSFET
NCE55P15	P-Channel Enhancement Mode Power MOSFET
NCE55P15K	P-Channel Enhancement Mode Power MOSFET
NCE5520Q	NCE N-Channel Enhancement Mode Power MOSFET
NCE5558K	NCE N-Channel Enhancement Mode Power MOSFET
NCE55H12	N-Channel Enhancement Mode Power MOSFET
NCE5015S	N-Channel Enhancement Mode Power MOSFET
NCE5080K	N-Channel Enhancement Mode Power MOSFET
NCE0102	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

http://www.ncepower.com Pb Free Product NCE55P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.