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NCE6020AQ - N-Channel Enhancement Mode Power MOSFET

General Description

General

Key Features

  • he NCE6020AQ uses advanced trench technology and design to.
  • VDS = 60V,ID = 20A provide excellent RDS(ON) with low gate charge. It can be used in a RDS(ON).

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Datasheet Details

Part number NCE6020AQ
Manufacturer NCE Power Semiconductor
File Size 779.03 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6020AQ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com NCE6020AQ NCE N-Channel Enhancement Mode Power MOSFET Description General Features he NCE6020AQ uses advanced trench technology and design to ● VDS = 60V,ID = 20A provide excellent RDS(ON) with low gate charge. It can be used in a RDS(ON) <23mΩ @ VGS=10V wide variety of applications. Application RDS(ON) <30mΩ @ VGS=4.5V ● High power and current handing capability ● Power switching application ●Fully characterized avalanche voltage and current ● Hard switched and high frequency circuits ●Lead free product is acquired ● Uninterruptible power supply ● Surface mount package DFN 3.3X3.