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NCE60H10A Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

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Datasheet Details

Part number NCE60H10A
Manufacturer NCE Power Semiconductor
File Size 346.35 KB
Description N-Channel Enhancement Mode Power MOSFET
Download NCE60H10A Download (PDF)

General Description

The NCE60H10A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

General

Overview

http://www.ncepower.com Pb Free Product NCE60H10A NCE N-Channel Enhancement Mode Power.

Key Features

  • VDS =60V,ID =100A RDS(ON) < 5.5 mΩ @ VGS=10V (Typ:4.8mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Special designed for convertors and power controls.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram Marking and pin assignment.

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Brand Logo Part Number Description Manufacturer
NCE Power Logo NCE60H10 NCE N-Channel Enhancement Mode Power MOSFET NCE Power

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