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NCE60P70G Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

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Datasheet Details

Part number NCE60P70G
Manufacturer NCE Power Semiconductor
File Size 669.37 KB
Description P-Channel Enhancement Mode Power MOSFET
Download NCE60P70G Download (PDF)

General Description

The NCE60P70G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Application ● High side switch for full bridge converter ● DC/DC converter for LCD display 100% UIS TESTED!

100% ΔVds TESTED!

Overview

http://www.ncepower.com NCE60P70G NCE P-Channel Enhancement Mode Power.

Key Features

  • VDS =-60V,ID =-70A RDS(ON)=11mΩ (typical) @ VGS=-10V RDS(ON)=13mΩ (typical) @ VGS=-4.5V.
  • High density cell design for ultra low Rdson.
  • Very low on-resistance RDS(on).
  • Good stability and uniformity with high EAS.
  • 150 °C operating temperature.
  • Pb-free lead plating DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCE60P70G NCE60P70G DFN5X6-8L Reel Size - Tape width - Quantity -.

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