• Part: NCE60P70G
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 669.37 KB
Download NCE60P70G Datasheet PDF
NCE Power Semiconductor
NCE60P70G
Description The NCE60P70G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. Application - High side switch for full bridge converter - DC/DC converter for LCD display 100% UIS TESTED! 100% ΔVds TESTED! General Features - VDS =-60V,ID =-70A RDS(ON)=11mΩ (typical) @ VGS=-10V RDS(ON)=13mΩ (typical) @ VGS=-4.5V - High density cell design for ultra low Rdson - Very low on-resistance RDS(on) - Good stability and uniformity with high EAS - 150 °C operating temperature - Pb-free lead plating DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃)...