NCE65NF099T
Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- Optimized body diode reverse recovery performance
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS pliant VDS min@Tjmax RDS(ON)TYP ID Qg 710 V 90 mΩ 36 A 45 nC