NCE65T1K2D Datasheet | NCE Power Semiconductor

Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features - New technology for high voltage device - Low on-resistance and low conduction losses - Small package - Ultra Low Gate Charge cause lower driving requirements - 100% Avalanche Tested - ROHS pliant VDS RDS(ON)TYP. ID 650 950 V mΩ A Application - Power factor correction（PFC） - Switched mode power supplies(SMPS) - Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE65T1K2 TO-220 NCE65T1K2 TO-263 NCE65T1K2F TO-220F NCE65T1K2F TO-263 TO-220 TO-220F Table 1. Absolute...