NCE65T360 Datasheet PDF (N-Channel Super Junction Power MOSFET) | Download NCE Power Semiconductor NCE65T360

NCE65T360 - N-Channel Super Junction Power MOSFET

This page provides the datasheet information for the NCE65T360, a member of the NCE65T360D N-Channel Super Junction Power MOSFET family.

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

New technology for high voltage device.
Low on-resistance and low conduction losses.
small package.
Ultra Low Gate Charge cause lower driving requirements.
100% Avalanche Tested.
ROHS compliant VDS RDS(ON)TYP ID 650 290 11.5 V mΩ A.

Datasheet Details

Part number	NCE65T360
Manufacturer	NCE Power Semiconductor
File Size	606.62 KB
Description	N-Channel Super Junction Power MOSFET
Datasheet	NCE65T360 Datasheet
Additional preview pages of the NCE65T360 datasheet.

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Full PDF Text Transcription

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NCE65T360D,NCE65T360,NCE65T360F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant VDS RDS(ON)TYP ID 650 290 11.

Published: Jun 3, 2018 |