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NCE70T360I - N-Channel Super Junction Power MOSFET

This page provides the datasheet information for the NCE70T360I, a member of the NCE70T360K N-Channel Super Junction Power MOSFET family.

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • Small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS RDS(ON)TYP ID 700 330 11.5 V mΩ A.

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Datasheet preview – NCE70T360I

Datasheet Details

Part number NCE70T360I
Manufacturer NCE Power Semiconductor
File Size 482.17 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet NCE70T360I Datasheet
Additional preview pages of the NCE70T360I datasheet.

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Full PDF Text Transcription

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NCE70T360K,NCE70T360I N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● Small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant VDS RDS(ON)TYP ID 700 330 11.
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