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NCE82H110D - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE82H110D N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE82H110D

Datasheet Details

Part number	NCE82H110D
Manufacturer	NCE Power Semiconductor
File Size	365.31 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE82H110D Datasheet
Additional preview pages of the NCE82H110D datasheet.

Product details

Description

The NCE82H110D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 82V,ID =110A RDS(ON) < 7mΩ @ VGS=10V (Typ:5.9mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

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Published: Jun 2, 2018 |