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NCEAP40P80K Datasheet

Manufacturer: NCE Power Semiconductor
NCEAP40P80K datasheet preview

Datasheet Details

Part number NCEAP40P80K
Datasheet NCEAP40P80K-NCEPowerSemiconductor.pdf
File Size 392.88 KB
Manufacturer NCE Power Semiconductor
Description Automotive P-Channel Power MOSFET
NCEAP40P80K page 2 NCEAP40P80K page 3

NCEAP40P80K Overview

The NCEAP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEAP40P80K Key Features

  • VDS =-40V,ID =-95A RDS(ON)=7.2mΩ (typical) @ VGS=-10V RDS(ON)=11mΩ (typical) @ VGS=-4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • 100% ΔVds tested
  • AEC-Q101 qualified
  • Automotive application
  • DC/DC Converter
NCE Power Semiconductor logo - Manufacturer

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NCEAP40P80K Distributor

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