• Part: NCEAP40P80K
  • Description: Automotive P-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 392.88 KB
Download NCEAP40P80K Datasheet PDF
NCE Power Semiconductor
NCEAP40P80K
Description The NCEAP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =-40V,ID =-95A RDS(ON)=7.2mΩ (typical) @ VGS=-10V RDS(ON)=11mΩ (typical) @ VGS=-4.5V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested - 100% ΔVds tested - AEC-Q101 qualified Application - Automotive application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification Schematic Diagram Marking and pin assignment TO-252 -2L top view Package Marking and Ordering Information Device Marking Device Device Package AP40P80K TO-252-2L Reel Size - Tape width - Quantity - Absolute...