NCEP0109AR Datasheet | NCE Power Semiconductor

http://.ncepower. NCE N-Channel Super Trench Power MOSFET Description The NCEP0109AR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS = 100V,ID = 9A RDS(ON) < 27mΩ @ VGS=10V (Typ:21mΩ) RDS(ON) < 37mΩ @ VGS=4.5V (Typ:30mΩ) - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 150 °C operating temperature - Pb-free lead plating - 100% UIS...