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NCEP0109AR - N-Channel Super Trench Power MOSFET

General Description

switching performance.

RDS(ON) and Qg.

Key Features

  • VDS = 100V,ID = 9A RDS(ON) < 27mΩ @ VGS=10V (Typ:21mΩ) RDS(ON) < 37mΩ @ VGS=4.5V (Typ:30mΩ).
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet Details

Part number NCEP0109AR
Manufacturer NCE Power Semiconductor
File Size 296.70 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP0109AR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com NCEP0109AR NCE N-Channel Super Trench Power MOSFET Description The NCEP0109AR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS = 100V,ID = 9A RDS(ON) < 27mΩ @ VGS=10V (Typ:21mΩ) RDS(ON) < 37mΩ @ VGS=4.