• Part: NCEP0112AS
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 427.87 KB
NCEP0112AS Datasheet (PDF) Download
NCE Power Semiconductor
NCEP0112AS

Description

The NCEP0112AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =100V,ID =12A RDS(ON)=9.9mΩ (typical) @ VGS=10V RDS(ON)=11.5mΩ (typical) @ VGS=4.5V Schematic diagram
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested Marking and pin assignment