NCEP026N10T Datasheet N-Channel Super Trench II Power MOSFET

Manufacturer: NCE Power Semiconductor

Datasheet Details

Part number	NCEP026N10T
Manufacturer	NCE Power Semiconductor
File Size	325.88 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	NCEP026N10T Datasheet

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

NCEP026N10T NCE N-Channel Super Trench II Power MOSFET.

VDS =100V,ID =230A RDS(ON)=2.15mΩ , typical@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP026N10T NCEP026N10T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol.

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