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NCEP035N85GU - N-Channel Power MOSFET

General Description

The NCEP035N85GU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =85V,ID =135A RDS(ON)=2.9mΩ (typical) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package P035N85GU NCEP035N85GU DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise.

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Datasheet Details

Part number NCEP035N85GU
Manufacturer NCE Power Semiconductor
File Size 322.97 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NCEP035N85GU Datasheet

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Full PDF Text Transcription (Reference)

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http://www.ncepower.com NCEP035N85GU NCE N-Channel Super Trench II Power MOSFET Description The NCEP035N85GU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =85V,ID =135A RDS(ON)=2.