Datasheet4U Logo Datasheet4U.com

NCEP038N10GU - N-Channel Super Trench II Power MOSFET

Datasheet Summary

Description

The NCEP038N10GU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =135A RDS(ON)=3.45mΩ (Typ. ) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating y 100% UIS TESTED! Onl 100% ∆Vds TESTED! DFN 5X6 Use times Top View Bottom View Schematic Diagram eng Package Marking and Ordering Information h Device Marking Device Device Package gs P038N10GU NCEP038N10GU DFN5X6-8L Reel Size - Tape width - Ton Absolute Maximum Ratings (TC=2.

📥 Download Datasheet

Datasheet preview – NCEP038N10GU

Datasheet Details

Part number NCEP038N10GU
Manufacturer NCE Power Semiconductor
File Size 386.20 KB
Description N-Channel Super Trench II Power MOSFET
Datasheet download datasheet NCEP038N10GU Datasheet
Additional preview pages of the NCEP038N10GU datasheet.

📁 Similar Datasheet

Other Datasheets by NCE Power Semiconductor

Full PDF Text Transcription

Click to expand full text
NCEP038N10GU NCE N-Channel Super Trench II Power MOSFET Description The NCEP038N10GU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =100V,ID =135A RDS(ON)=3.45mΩ (Typ.
Published: |