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NCEP038N10GU Datasheet

Manufacturer: NCE Power Semiconductor
NCEP038N10GU datasheet preview

Datasheet Details

Part number NCEP038N10GU
Datasheet NCEP038N10GU-NCEPowerSemiconductor.pdf
File Size 386.20 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Super Trench II Power MOSFET
NCEP038N10GU page 2 NCEP038N10GU page 3

NCEP038N10GU Overview

The NCEP038N10GU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP038N10GU Key Features

  • VDS =100V,ID =135A RDS(ON)=3.45mΩ (Typ.) @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • Tape width
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NCEP038N10GU Distributor

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