NCEP050N10M Key Features
- VDS =100V,ID =123A
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating
- Tape width
- Quantity
- Part: NCEP050N10M
- Manufacturer: NCE Power Semiconductor
- Size: 736.64 KB
Related NCE Power Semiconductor Datasheets
| Part Number | Description |
|---|---|
| NCEP055NH40GU | N-Channel Super Trench III Power MOSFET |
| NCEP0109AR | N-Channel Super Trench Power MOSFET |
| NCEP0112AS | N-Channel Super Trench Power MOSFET |
| NCEP0114AS | N-Channel Super Trench Power MOSFET |
| NCEP0116AS | N-Channel Super Trench Power MOSFET |
NCEP050N10M Description
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.