NCEP055NH40GU Key Features
- VDS =40V,ID =68A
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 150 °C operating temperature
- Pb-free lead plating
- Part: NCEP055NH40GU
- Manufacturer: NCE Power Semiconductor
- Size: 726.55 KB
Related NCE Power Semiconductor Datasheets
| Part Number | Description |
|---|---|
| NCEP050N10M | N-Channel Super Trench II Power MOSFET |
| NCEP0109AR | N-Channel Super Trench Power MOSFET |
| NCEP0112AS | N-Channel Super Trench Power MOSFET |
| NCEP0114AS | N-Channel Super Trench Power MOSFET |
| NCEP0116AS | N-Channel Super Trench Power MOSFET |
NCEP055NH40GU Description
The NCEP055NH40GU uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.