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NCEP095N10AG Datasheet N-Channel Super Trench II Power MOSFET

Manufacturer: NCE Power Semiconductor

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Datasheet Details

Part number NCEP095N10AG
Manufacturer NCE Power Semiconductor
File Size 328.72 KB
Description N-Channel Super Trench II Power MOSFET
Download NCEP095N10AG Download (PDF)

General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

Overview

NCEP095N10AG NCE N-Channel Super Trench II Power MOSFET.

Key Features

  • VDS =100V,ID =60A RDS(ON)=8.5mΩ , typical@ VGS=10V RDS(ON)=10.5mΩ , typical@ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package P095N10AG NCEP095N10AG DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maxim.

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