NCEP18N10AQ Datasheet N-Channel Super Trench II Power MOSFET

Manufacturer: NCE Power Semiconductor

Datasheet Details

Part number	NCEP18N10AQ
Manufacturer	NCE Power Semiconductor
File Size	322.09 KB
Description	N-Channel Super Trench II Power MOSFET
Download	NCEP18N10AQ Download (PDF)

The NCEP18N10AQ uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

http://www.ncepower.com NCEP18N10AQ NCE N-Channel Super Trench II Power.

VDS =100V,ID =35A RDS(ON)=16.0mΩ (typical) @ VGS=10V RDS(ON)=18.0mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 3.3X3.3 Top View Bottom View Package Marking and Ordering Information Device Marking Device Device Package NCEP18N10AQ NCEP18N10AQ DFN3.3X3.3-8L Reel Size - Schematic Diagram Tape width - Quantity - Abso.

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