NCEP18N10AQ Description
The NCEP18N10AQ uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
NCEP18N10AQ Key Features
- VDS =100V,ID =35A RDS(ON)=16.0mΩ (typical) @ VGS=10V RDS(ON)=18.0mΩ (typical) @ VGS=4.5V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 150 °C operating temperature
- Pb-free lead plating
- Schematic Diagram
- Quantity