Datasheet Summary
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Pb Free Product
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP4085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. It is ESD protested.
General Features
- VDS =40V,ID =85A RDS(ON)=3.0mΩ (typical) @ VGS=10V RDS(ON)=4.0mΩ (typical) @ VGS=4.5V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 150 °C operating temperature
- Pb-free lead plating
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